Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers-Reference-Cited by-同舟云学术

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Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers

Published:2003-03 Issue:3 Volume:47 Page:507-512
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pavelescu E.-M.,Peng C.S.,Jouhti T.,Konttinen J.,Dumitrescu M.,Li W.,Pessa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy;Li;Appl Phys Lett,2001

2. Band anticrossing in GaInNAs alloys;Shan;Phys Rev Lett,1999

3. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance;Kondow;Jpn J Appl Phys,1996

4. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes;Borchert;IEEE Photon Technol Lett,2000

5. 1.32-μm GaInNAs–GaAs laser with a low threshold current density;Peng;IEEE Photon Technol Lett,2002

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen-activated bowing of dilute In[sub y]Ga[sub 1−y]As[sub 1−x]N[sub x] based on photoreflectance studies;Journal of Applied Physics;2003

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