Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1418455
Reference8 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?
3. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
4. Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers
5. Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law
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1. Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser;Semiconductor Science and Technology;2018-08-01
2. Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy;Optical Materials;2017-02
3. Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm;Journal of Alloys and Compounds;2015-10
4. Material Gain in Ga0.66In0.34NyAs1–y, GaNyAs0.69–ySb0.31, and GaNyP0.46Sb0.54–yQuantum Wells Grown on GaAs Substrates: Comparative Theoretical Studies;IEEE Journal of Quantum Electronics;2014-12
5. Instability of structural defects generated by electron irradiation in GaInNAs quantum wells;Journal of Luminescence;2014-10
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