Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1370549
Reference9 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
3. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
5. Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers
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