Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337624
Reference8 articles.
1. 1.2 [micro sign]m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink
2. Band Anticrossing in GaInNAs Alloys
3. Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
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