Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures
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Elsevier
Reference93 articles.
1. Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN
2. Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys
3. Photoreflectance spectroscopy of microstructures;Glembocki,1992
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