Anatomy-performance correlation in Ti-based contact metallizations on AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2433765
Reference29 articles.
1. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
2. A review of the metal–GaN contact technology
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors
5. Study of contact formation in AlGaN/GaN heterostructures
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure;Japanese Journal of Applied Physics;2022-05-24
2. A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs;IEEE Access;2021
3. Circular Transmission Line Measurement (CTLM) Studies on Epitaxial Layers of AlGaN;Materials Today: Proceedings;2018
4. Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures;Semiconductors;2017-04
5. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing;Semiconductor Science and Technology;2016-03-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3