Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing-Reference-Cited by-同舟云学术

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Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing

Published:2016-03-15 Issue:5 Volume:31 Page:055003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tzou An-Jye,Hsieh Dan-Hua,Chen Szu-Hung,Li Zhen-Yu,Chang Chun-Yen,Kuo Hao-Chung

Funder

Ministry of Science and Technology of Republic of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=5/a=055003/pdf

Reference23 articles.

1. Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications

2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

3. Low resistance ohmic contacts on wide band‐gap GaN

4. Effect of ohmic contacts on buffer leakage of GaN transistors

5. Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

2. Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process;Chinese Physics B;2023-03-01

3. Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts;IEEE Transactions on Electron Devices;2022-10

4. Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT;Crystals;2022-06-10

5. The Evolution of Manufacturing Technology for GaN Electronic Devices;Micromachines;2021-06-23

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