Atomistic modelling of interface structure and deformation mechanisms in the Al/GaN multilayer under compression-Reference-Cited by-同舟云学术

Atomistic modelling of interface structure and deformation mechanisms in the Al/GaN multilayer under compression

Author:

Chen Jingjing¹,Zhang Huimin²,Xiang Henggao³

Affiliation:

1. School of Information and Electrical Engineering, Ningde Normal University, Ningde, People’s Republic of China

2. Wuxi Fisheries College, Nanjing Agricultural University, Wuxi, People’s Republic of China

3. School of Nanjing University of Aeronautics and Astronautics, Nanjing, People’s Republic of China

Funder

Natural Science Foundation of Fujian province

Education Department Foundation of Fujian province

Ningde Normal University

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modeling and Simulation,Information Systems,General Chemistry

Link

Reference47 articles.

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