InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1319505
Reference15 articles.
1. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off
2. New approaches to joining ceramics for high-temperature applications
3. Optical Process for Liftoff of Group III-Nitride Films
4. Damage-free separation of GaN thin films from sapphire substrates
5. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
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