Low resistance ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices-Reference-Cited by-同舟云学术

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Low resistance ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

Published:2024-03 Issue: Volume:46 Page:103937
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Shivani ,Sharma Nipun,Kumar Mahesh,Kumar Mukesh^ORCID

Funder

Defence Research and Development Organisation

Publisher

Elsevier BV

Reference50 articles.

1. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges;Tsao;Adv. Electron. Mater.,2018

2. A strategic review on gallium oxide based power electronics: Recent progress and future prospects;Shivani;Mater. Today Commun.,2022

3. The dawn of Ga2O3 HEMTs for high power electronics - A review;Singh;Mater. Sci. Semicond. Process.,2020

4. P-type β-gallium oxide: A new perspective for power and optoelectronic devices;Chikoidze;Mater. Today Phys.,2017

5. Review of Ga2O3-based optoelectronic devices;Guo;Mater. Today Phys.,2019

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