Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869459
Reference22 articles.
1. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
3. Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
4. Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
5. Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
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3. High internal quantum efficiency of long wavelength InGaN quantum wells;Applied Physics Letters;2021-08-16
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