High internal quantum efficiency of long wavelength InGaN quantum wells
Author:
Affiliation:
1. Department of Applied Physics, KTH Royal Institute of Technology, AlbaNova University Center, 10691 Stockholm, Sweden
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Energimyndigheten
Vetenskapsrådet
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Simons Foundation
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0063237
Reference28 articles.
1. Internal quantum efficiency of nitride light emitters: a critical perspective
2. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future
3. Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport
4. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
5. Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence
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