Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823589
Reference25 articles.
1. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
3. GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation
4. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
5. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
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3. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells;Journal of Applied Physics;2020-12-14
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