Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Author:
Affiliation:
1. Department of Applied Physics, KTH Royal Institute of Technology, AlbaNova University Center, 10691 Stockholm, Sweden
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Energimyndigheten
Vetenskapsrådet
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0031863
Reference44 articles.
1. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future
2. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
3. Carrier localization mechanisms in InxGa1−xN/GaN quantum wells
4. Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence
5. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
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3. Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red;Japanese Journal of Applied Physics;2023-10-01
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