High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication-Reference-Cited by-同舟云学术

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Published:2023-02 Issue:1 Volume:15 Page:1-4
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Xu Feifan¹^ORCID,Qiu Pengjiang²,Tao Tao¹^ORCID,Tian Pengfei²^ORCID,Liu Xiaoyan³^ORCID,Zhi Ting³,Xie Zili¹,Liu Bin¹^ORCID,Zhang Rong¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. School of Information Science and Technology, Fudan University, Shanghai, China

3. College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Leading-edge Technology Program of Jiangsu Natural Science Foundation

The Science Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/9999138/10014998.pdf?arnumber=10014998

Reference26 articles.

1. Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

2. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

3. Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes

4. GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

5. High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

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