Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1977210
Reference21 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
3. Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
4. Theory ofGaN(101¯0)and (112¯0) surfaces
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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1. Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiN interlayer;Journal of Alloys and Compounds;2017-12
2. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field;Materials Science in Semiconductor Processing;2016-11
3. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field;Materials Science in Semiconductor Processing;2016-07
4. Raman Scattering Applied to Materials Science;Procedia Materials Science;2015
5. Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well;Applied Physics Letters;2014-03-17
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