Theory ofGaN(101¯0)and (112¯0) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.R10477/fulltext
Reference16 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
3. Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
5. Self-interaction correction to density-functional approximations for many-electron systems
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