Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.035312/fulltext
Reference26 articles.
1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
2. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
3. Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
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