Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field-Reference-Cited by-同舟云学术

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Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

Published:2016-11 Issue: Volume:55 Page:90-94
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Budagosky J.A.,Garro N.,Cros A.,García-Cristóbal A.,Founta S.,Daudin B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. The Blue Laser Diode;Nakamura,2000

2. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

3. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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