Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3662035
Reference15 articles.
1. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
2. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
3. Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)
4. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
5. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride;Microelectronic Engineering;2020-09
2. The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering;IEICE Transactions on Electronics;2020-06-01
3. Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment;Journal of Semiconductors;2019-01
4. Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors;Applied Physics Letters;2016-09-26
5. The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate;Journal of Materials Chemistry C;2015
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3