The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

Author:

Mahata Chandreswar1234,Oh Il-Kwon1234,Yoon Chang Mo1234,Lee Chang Wan1234,Seo Jungmok1234,Algadi Hassan1234,Sheen Mi-Hyang5678,Kim Young-Woon5678,Kim Hyungjun1234,Lee Taeyoon1234

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul 120-749

4. Republic of Korea

5. Department of Materials Science and Engineering

6. Seoul National University

7. Seoul 151-744

8. Korea

Abstract

Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta1−xZrxO composite gate dielectric film and a SiO2passivation layer were fabricated on an indium phosphide (InP) substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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