The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate-Reference-Cited by-同舟云学术

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

Published:2015 Issue:39 Volume:3 Page:10293-10301
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Mahata Chandreswar¹²³⁴,Oh Il-Kwon¹²³⁴,Yoon Chang Mo¹²³⁴,Lee Chang Wan¹²³⁴,Seo Jungmok¹²³⁴,Algadi Hassan¹²³⁴,Sheen Mi-Hyang⁵⁶⁷⁸,Kim Young-Woon⁵⁶⁷⁸,Kim Hyungjun¹²³⁴,Lee Taeyoon¹²³⁴

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul 120-749

4. Republic of Korea

5. Department of Materials Science and Engineering

6. Seoul National University

7. Seoul 151-744

8. Korea

Abstract

Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta_1−xZr_xO composite gate dielectric film and a SiO₂passivation layer were fabricated on an indium phosphide (InP) substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01890K

Reference54 articles.

1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

2. Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

3. Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

4. Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs

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