Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

Published:2016-09-26 Issue:13 Volume:109 Page:131602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lechaux Y.¹,Fadjie-Djomkam A. B.¹,Bollaert S.¹,Wichmann N.¹

Affiliation:

1. Institute of Electronics, Microelectronics and Nanotechnology, University of Lille 1, CNRS UMR 8520, Avenue Henri Poincaré, 59652 Villeneuve d'Ascq, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963656

Reference30 articles.

1. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

2. Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs

3. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

4. Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

5. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stabilization of Copper-Based Biochips with Alumina for Biosensing Application;Biosensors;2022-12-06

2. Improved interface and dark current properties of InGaAs photodiodes by high-density N2 plasma and stoichiometric Si3N4 passivation;Infrared Physics & Technology;2022-05

3. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

4. Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy;Nanotechnology;2018-11-19

5. Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process;Journal of Applied Physics;2018-11-07