Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics-Reference-Cited by-同舟云学术

Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

Published:2007-09 Issue:9-10 Volume:84 Page:2146-2149
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Martens K.,Wang W.,De Keersmaecker K.,Borghs G.,Groeseneken G.,Maes H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. C.W. Wilmsen, “Physics and Chemistry of III_V Compound Semiconductor Interfaces”, 1985.

2. M. Passlack, N.A., J.K. Abrokwah, “Optical Measurement System for Characterizing Compound Semiconductor Interface and Surface States,” IEEE TIM 47 (1998) 1362-1366.

3. E.H. Nicollian and J.R. Brews, “MOS (Metal Oxide Semiconductor) Physics and Technology”, 2003.

4. W.E. Spicer, N.A., I. Lindau, “The Advanced Unified Defect Model for Schottky Barrier Formation,” J. Vac. Sci. Technol. B 6(4) (1998) 1245-1251.

5. K. Martens, N.A., H. Maes, “ Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices,” submitted to Solid-State Electronics.

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