Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process
Author:
Affiliation:
1. University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France
2. Laboratory of Nanoelectronics and Nanomaterials, University of Salamanca, Calle Espejo, 37007 Salamanca, Spain
Funder
Agence Nationale de la Recherche
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5049571
Reference39 articles.
1. Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET
2. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
3. Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics
4. Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum
5. Sulfur as a surface passivation for InP
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