Addressing the gate stack challenge for high mobility In<inf>x</inf>Ga<inf>1-x</inf>As channels for NFETs-Reference-Cited by-同舟云学术

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Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Goel N.,Heh D.,Koveshnikov S.,Ok I.,Oktyabrsky S.,Tokranov V.,Kambhampatic R.,Yakimov M.,Sun Y.,Pianetta P.,Gaspe C.K.,Santos M.B.,Lee J.,Datta S.,Majhi P.,Tsai W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796695.pdf?arnumber=4796695

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As;ACS Applied Electronic Materials;2021-09-30

2. RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect;Transactions on Electrical and Electronic Materials;2020-11-17

3. Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET;IEEE Transactions on Electron Devices;2019-04

4. Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs;Transactions on Electrical and Electronic Materials;2018-05-08

5. Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors;Applied Physics Letters;2016-09-26

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