Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As
Author:
Affiliation:
1. Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Korea
Funder
National Research Foundation of Korea
Civil-Military Technology Cooperation Program
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00565
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1. Nanometre-scale electronics with III–V compound semiconductors
2. Germanium Based Field-Effect Transistors: Challenges and Opportunities
3. Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures
4. III–V compound semiconductor transistors—from planar to nanowire structures
5. Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0.53Ga0.47As
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