Coefficients of thermal expansion of single crystalline β-Ga2O3 and in-plane thermal strain calculations of various materials combinations with β-Ga2O3-Reference-Cited by-同舟云学术

Coefficients of thermal expansion of single crystalline β-Ga2O3 and in-plane thermal strain calculations of various materials combinations with β-Ga2O3

Published:2019-02 Issue:2 Volume:7 Page:022517
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Liao Michael E.¹^ORCID,Li Chao¹,Yu Hsuan Ming¹^ORCID,Rosker Eva¹,Tadjer Marko J.¹,Hobart Karl D.²,Goorsky Mark S.¹

Affiliation:

1. University of California, Los Angeles, Los Angeles, California 90095, USA

2. U.S. Naval Research Laboratory, Washington, District of Columbia 20375, USA

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5054327

Reference47 articles.

1. Recent progress in Ga2O3power devices

2. A review of Ga2O3materials, processing, and devices

3. Q.Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology (Wiley, New York), 1999), p. 8.

4. Defects in epitaxial multilayers I. Misfit dislocations

5. A Reinvestigation of β-Gallium Oxide

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