InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103678
Reference13 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
3. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
4. Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers
5. Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
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