Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101590
Reference16 articles.
1. Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)
2. Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser
3. High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser
4. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
5. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
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2. 快速热处理对应变InGaAs/GaAs单量子阱激光二极管电子发射和DX中心的影响;Acta Physica Sinica;2002
3. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes;Journal of Crystal Growth;2000-09
4. Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth;Journal of Crystal Growth;1998-11
5. Effect of rapid thermal annealing on the optical and structural properties of highly strained quantum well structures;Solid State Communications;1996-06
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