Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes-Reference-Cited by-同舟云学术

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Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

Published:2000-09 Issue:1 Volume:218 Page:13-18
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lu Liwu,Zhang Yanhua,Xu Zuntu,Xu Zhongying,Wang Zhanguo,Wang J.,Ge Weikun

Funder

Research Grants Council, University Grants Committee

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Strained‐layer quantum‐well injection laser

2. Stable operation (over 5000 h) of high-power 0.98- mu m InGaAs-GaAs strained quantum well ridge waveguide lasers for pumping Er/sup 3+/-doped fiber amplifiers

3. Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing;Journal of Crystal Growth;2002-08

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