Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97258
Reference6 articles.
1. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
2. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
3. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
4. High external efficiency (36%) 5‐μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy
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