Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93046
Reference13 articles.
1. The analysis of optical scattering in double-heterostructure and five-layer heterostructure (GaAl)As/GaAs injection lasers
2. Performance and characterization of GaAs‐(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor deposition
3. Room‐temperature threshold‐current dependence of GaAs‐AlxGa1−xAs double‐heterostructure lasers onxand active‐layer thickness
4. The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers
5. On the relation between threshold current and interface recombination velocities in double-heterojunction lasers
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