The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90314
Reference16 articles.
1. Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks
2. Molecular beam epitaxial writing of patterned GaAs epilayer structures
3. Integrated optics and new wave phenomena in optical waveguides
4. GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy
5. Application of molecular-beam epitaxial layers to heterostructure lasers
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