GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655476
Reference6 articles.
1. Growth of three‐dimensional dielectric waveguides for integrated optics by molecular‐beam‐epitaxy method
2. Three‐dimensional light guides in single‐crystal GaAs–Alx Ga1 − xAs
3. Properties of Schottky barriers and p‐n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers
4. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
5. Magnesium‐doped GaAs and Alx Ga1−x As by molecular beam epitaxy
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