Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions-Reference-Cited by-同舟云学术

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Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions

Published:2023-05 Issue: Volume:177 Page:207536
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Al-Naghmaish Aishah,Ghrib Taher^ORCID,Dakhlaoui Hassen,AL-Saleem Nouf K.,Ercan Filiz,Kayed Tarek S.,Elibol Erdem,Ercan Ismail,Yıldız Mesut,Elshekhipy Abdelhafeez A.,Almalki Nawal

Funder

Imam Abdulrahman Bin Faisal University

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference51 articles.

1. Physics of Semiconductors and Their Heterostructures;Singh,1993

2. Reflective high-efficient and compact optical antenna on GaAs/AlGaAs platform;Wang;Opt Commun.,2022

3. The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE;Shibasaki;J. Cryst. Growth,2005

4. Growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates;Piskorski;Thin Solid Films,2004

5. Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission;Touraton;Thin Solid Films,2021

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