Performance and characterization of GaAs‐(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Performance and characterization of GaAs‐(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor deposition

Published:1981-03 Issue:3 Volume:52 Page:1528-1536
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Whiteaway J. E. A.¹,Thrush E. J.¹

Affiliation:

1. Standard Telecommunication Laboratories Limited., London Road, Harlow, Essex, England, CM17 9NA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 31, 466 (1977).APPLAB0003-6951

2. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 32, 405 (1978).APPLAB0003-6951

3. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 32, 473 (1978).APPLAB0003-6951

4. E. J. Thrush, P. R. Selway, and G. D. Henshall, Electron. Lett. 15, 156 (1979).ELLEAK0013-5194

5. E. J. Thrush and J. E. A. Whiteaway, Electron. Lett. 15, 666 (1979).ELLEAK0013-5194

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1. III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth;Journal of Vacuum Science & Technology B;2023-10-31

2. References;Thin Films by Chemical Vapour Deposition;1990

3. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

4. GaAs/(GaAl)As LOC lasers grown by MOCVD;Journal of Crystal Growth;1986-09

5. Gallium Triorganyls;Ga Organogallium Compounds;1986

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