Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3503435
Reference24 articles.
1. Long‐lived InGaAs quantum well lasers
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3. Dilute III-V Nitride Semiconductors and Material Systems
4. Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers
5. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
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