Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100233
Reference21 articles.
1. Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance
2. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
3. Strained‐layer quantum‐well injection laser
4. Stimulated emission in strained‐layer quantum‐well heterostructures
5. Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)
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1. Optoelectronic Devices;Guide to State-of-the-Art Electron Devices;2013-02-25
2. Gain Characteristics of Optical-Gate Switches Using InGaAs/GaAs Strained-Layer Quantum Wells;Japanese Journal of Applied Physics;1996-05-15
3. Effects of strain and Coulomb interaction on gain and refractive index in quantum-well lasers;Journal of the Optical Society of America B;1993-05-01
4. STRAINED LAYER QUANTUM WELL HETEROSTRUCTURE LASERS;Quantum Well Lasers;1993
5. Quantum-Well Semiconductor Lasers;Semiconductor Lasers;1993
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