Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101599
Reference9 articles.
1. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
2. Reduction of lasing threshold current density by the lowering of valence band effective mass
3. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
4. Theoretical gain of strained-layer semiconductor lasers in the large strain regime
5. Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers
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1. Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation;SPIE Proceedings;2005-01-31
2. Valence Subband Structures and Optical Properties of Strain-Compensated Quantum Wells;Japanese Journal of Applied Physics;2001-01-15
3. Quantum Well Semiconductor Lasers;Semiconductor Lasers I;1999
4. Multistep formation and lateral variation in the In composition in InGaAs layers grown by metalorganic vapor phase epitaxy on (001) vicinal GaAs substrates;Journal of Crystal Growth;1994-12
5. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate;IEEE Journal of Quantum Electronics;1994-04
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