Electrically injected GaAsBi/GaAs single quantum well laser diodes

Author:

Liu Juanjuan12,Pan Wenwu12ORCID,Wu Xiaoyan12ORCID,Cao Chunfang1,Li Yaoyao1,Chen Xiren23,Zhang Yanchao14,Wang Lijuan1,Yan Jinyi1,Zhang Dongliang12,Song Yuxin1ORCID,Shao Jun23,Wang Shumin15

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

4. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China

5. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

Funder

Foundation of the National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

National Basic Research Program of China

Swedish Research Council(VR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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