InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4837615
Reference34 articles.
1. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x
2. Valence band anticrossing in GaBixAs1−x
3. Valence-band anticrossing in mismatched III-V semiconductor alloys
4. Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate
5. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
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4. Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1−xBix (x ≾ 0.4%);Journal of Applied Physics;2024-01-16
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