Initial oxynitridation of a Si(001)-2×1 surface by NO
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126707
Reference21 articles.
1. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
2. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
3. Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications
4. Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides
5. MOS characteristics of ultrathin NO-grown oxynitrides
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1. Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study;Journal of Applied Physics;2016-03-28
2. RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence;Journal of Alloys and Compounds;2014-11
3. Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2013-12-01
4. Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation;Japanese Journal of Applied Physics;2010-09-21
5. Reaction Kinetics in the Rapid Oxide Growth on Si(001)-(2×1) Probed with Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2010-05-20
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