Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation-Reference-Cited by-同舟云学术

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Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Published:2010-09-21 Issue:9 Volume:49 Page:091301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Murakawa Shigemi,Ishizuka Shu-ichi,Nakanishi Toshio,Suwa Tomoyuki,Teramoto Akinobu,Sugawa Shigetoshi,Hattori Takeo,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications

2. Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N[sub 2]O-Grown Oxynitride

3. Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

4. New era of silicon technologies due to radical reaction based semiconductor manufacturing

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2;Coatings;2021-10-14

2. Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding;Coatings;2020-12-22

3. Oriented Si3N4 crystallites formed by plasma nitriding of SiO2/Si (111) substrate;Surface and Coatings Technology;2020-08

4. Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals;Japanese Journal of Applied Physics;2014-02-04

5. Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation;Nanoscale Research Letters;2013-05-01

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