Abstract
Ultra-thin Si3N4 films were grown on Si(111) surface by radio frequency (RF)-N2 plasma exposure at 900 °C with 1–1.2 sccm of a flux of atomic nitrogen. We discuss the effect of various conditions such as N2 flow rate, nitriding time and RF power on the optical, chemical, and structural properties of a nitrided Si3N4 layer. The optical properties, surface morphology and chemical composition are investigated by using ellipsometry, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Cross-sectional TEM images show that an RF power of 350 W induced some damage to the Si(111) surface. The thickness of nitrided Si3N4 was measured to be about 5–7 nm. XPS results shown that the binding energy of Si 2p3/2 located at 101.9 ± 0.1 eV is attributed to the Si–N bonds in the Si3N4 compound. Smooth Si3N4 ultra-thin films were obtained at a nitridation time close to 1 h with an RF power of 300 W, with a measured refractive index (n) nearly to 1.88 at 632 nm. The increase in refractive index with decreased RF-plasma power and nitrogen flow rate is probably attributed to the change in the stoichiometry of the film and less surface damage.
Funder
Ministry of Science and Technology
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Cited by
2 articles.
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