Making silicon nitride film a viable gate dielectric-Reference-Cited by-同舟云学术

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Making silicon nitride film a viable gate dielectric

Published:1998-03 Issue:3 Volume:45 Page:680-690
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ma T.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/14384/00661229.pdf?arnumber=661229

Cited by 318 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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