RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference27 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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1. Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD;ECS Journal of Solid State Science and Technology;2023-04-01
2. Investigation of Silicon Quantum Dots Embedded in Boron-Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution;physica status solidi (a);2017-11-23
3. Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films;Thin Solid Films;2017-03
4. Size distribution and visible luminescence of silicon nanoparticles embedded in SiNx thin film: Role of RF power in PECVD;Functional Materials Letters;2016-12-05
5. Formation of silicon quantum dots by RF power driven defect control;RSC Advances;2016
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