Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109749
Reference18 articles.
1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices
3. Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides
4. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
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