Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2761831
Reference15 articles.
1. Dielectric breakdown mechanisms in gate oxides
2. Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
3. Electron transport through broken down ultra-thin SiO2 layers in MOS devices
4. Degradation dynamics of ultrathin gate oxides subjected to electrical stress
5. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1998), 3, 69.
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