Degradation dynamics of ultrathin gate oxides subjected to electrical stress-Reference-Cited by-同舟云学术

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Degradation dynamics of ultrathin gate oxides subjected to electrical stress

Published:2003-09 Issue:9 Volume:24 Page:604-606
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Miranda E.,Cester A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27489/01224532.pdf?arnumber=1224532

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Facts and Myths of Dielectric Breakdown Processes—Part II: Post-Breakdown and Variability;IEEE Transactions on Electron Devices;2019-11

2. Progressive breakdown dynamics and entropy production in ultrathin SiO2 gate oxides;Applied Physics Letters;2011-06-20

3. Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers;Applied Physics Letters;2007-07-30

4. The Role of Power Dissipation on the Progressive Breakdown Dynamics of Ultra-Thin Gate Oxides;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04

5. Precise and Simple Methods for Detection of Initial Defects in 1.2 nm Gate Dielectrics Based on Nonlinear Conductions;2006 IEEE International Reliability Physics Symposium Proceedings;2006

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