Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study-Reference-Cited by-同舟云学术

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Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study

Published:2017-03-28 Issue:12 Volume:146 Page:124706
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Tea Eric¹^ORCID,Huang Jianqiu¹^ORCID,Li Guanchen¹,Hin Celine¹²

Affiliation:

1. Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, Virginia 24061, USA

2. Department of Material Science and Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, Virginia 24061, USA

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4979041

Reference26 articles.

1. Ultra-thin dielectric breakdown in devices and circuits: A brief review

2. Time dependent dielectric breakdown physics – Models revisited

3. Dielectric breakdown mechanisms in gate oxides

4. Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

5. Resistive switching in silicon suboxide films

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1. Three-dimensional atomic insights into the metal-oxide interface in Zr-ZrO2 nanoparticles;Nature Communications;2024-09-02

2. Blurred interface induced control of electrical transport properties in Josephson junctions;Scientific Reports;2024-07-27

3. Three-dimensional atomic interface between metal and oxide in Zr-ZrO2 nanoparticles;2024-03-13

4. Metallic electrical contact materials: DFT calculations, wetting mechanism and arc resistance;Materials Today Physics;2024-01

5. Effect of the halogen substitution on the interfacial properties of MAPbI3 (110)/Ti3C2T2 (001): First-principles calculations;Vacuum;2023-09

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